isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY72 DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation: PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VCEX Collector-Emitter Voltage VBE= -1.5V 150 V VCER Collector-Emitter Voltage RBE= 100Ω 130 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 7.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY72 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 120 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω 130 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 6.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V 1.7 V ICEO Collector Cutoff Current VCE= 140V; IB= 0 10 mA ICEX Collector Cutoff Current VCE= 130V; VBE(off)= 1.5V VCE= 130V; VBE(off)= 1.5V, TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 4V 60 Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V 0.8 fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN MAX UNIT 180 MHz