isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY46 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min.) ·DC Current Gain: hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC = 15A ·High Switching Speed APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 600 V s c s i . w w w 600 V 300 V 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 17 A IB Base Current 5 A PC Collector Power Dissipation@TC≤45℃ 95 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 MAX UNIT 1.37 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY46 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 5A 2.0 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 VCB= 600V; IE= 0, TC=150℃ 0.2 2.5 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT tf toff w w IC= 2A; VCE= 2V 20 IC= 10A; VCE= 2V 5 IC= 0.5A; VCE= 10V 10 Turn-on Time Fall Time MIN n c . i m e s c s i . w Current Gain-Bandwidth Product Switching times ton CONDITIONS IC= 5A; IB1= -IB2= 1A Turn-off Time isc Website：www.iscsemi.cn 2 MAX UNIT MHz 0.5 μs 1.0 μs 3.5 μs