isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL382 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i w w w IC Collector Current-Continuous ICM UNIT 800 400 9 V V V 5 A Collector Current-peak tp<5ms 8 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms 4 A PC Collector Power Dissipation TC=25℃ 70 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.78 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL382 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 0.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A 1.1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V ICES Collector Cutoff Current VCE= 800V; VBE= 0 VCE= 800V; VBE= 0, TC= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current 0.25 mA hFE-1 DC Current Gain hFE-2 DC Current Gain 1.0 μs 2.5 μs 0.8 μs Switching Times, Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn MAX UNIT V 9 V B B B n c . i m e s c is B VCE= 400V; IB= 0 IC= 2A; VCE= 5V 8 IC= 10mA; VCE= 5V 10 IC= 2A; IB1= -IB2= 0.4A; VCC= 250V; tp= 30μs TYP. 400 B w. w w MIN