Inchange Semiconductor Product Specification BUS13 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=℃) 固 SYMBOL PARAMETER D N O IC MAX UNIT 850 V 400 V 9 V Collector current 15 A Collector current-Peak 30 A IB Base current 6 A IBM Base current-Peak 9 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC ICM Open emitter M E S GE N A H C IN CONDITIONS Open base Open collector Tmb=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification BUS13 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH 400 VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 1.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.6 V ICES Collector cut-off current VCE=RatedBVCEO; VBE=0 TC=125℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=5V 15 TYP. MAX UNIT V 50 Switching times ton ts tf 体 半导 R O T UC Turn-on time 固电 Fall time IC M E ES G N A CH IN OND IC=8A; IB1=- IB2=1.6A Storage time 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUS13 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3