ISC BUS13

Inchange Semiconductor
Product Specification
BUS13
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
导体
半
电
R
O
T
UC
Absolute maximum ratings(Ta=℃)
固
SYMBOL
PARAMETER
D
N
O
IC
MAX
UNIT
850
V
400
V
9
V
Collector current
15
A
Collector current-Peak
30
A
IB
Base current
6
A
IBM
Base current-Peak
9
A
PT
Total power dissipation
175
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
ICM
Open emitter
M
E
S
GE
N
A
H
C
IN
CONDITIONS
Open base
Open collector
Tmb=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
BUS13
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0; L=25mH
400
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
1.6
V
ICES
Collector cut-off current
VCE=RatedBVCEO; VBE=0
TC=125℃
1.0
4.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE
DC current gain
IC=2A ; VCE=5V
15
TYP.
MAX
UNIT
V
50
Switching times
ton
ts
tf
体
半导
R
O
T
UC
Turn-on time
固电
Fall time
IC
M
E
ES
G
N
A
CH
IN
OND
IC=8A; IB1=- IB2=1.6A
Storage time
2
1.0
μs
4.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
BUS13
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3