ISC BUT76

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT76 BUT76A
・
DESCRIPTION
・With TO-220C package
・High voltage;high speed
・High power dissipation
APPLICATIONS
・Switching mode power supply
・Motor control and relay driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
固电
BUT76
VCBO
Collector-base voltage
体
半导
CONDITIONS
BUT76
Collector-emitter voltage
Emitter-base voltage
V
1000
400
Open base
BUT76A
VEBO
UNIT
850
Open emitter
BUT76A
VCEO
VALUE
V
450
Open collector
7
V
IC
Collector current
12
A
ICM
Collector current-peak
20
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
110
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.13
K/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to mounting case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT76 BUT76A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUT76
V(BR)CEO
Collector-emitter
breakdown voltage
VBEsat
ICES
MAX
IC=500mA ;LC=125mH
Emitter-base breakdown voltage
BUT76
VCEsat
TYP.
V
450
IE=1mA ;IC=0
6
V
IC=6A ;IB=1.2A
Collector-emitter
saturation voltage
BUT76A
IC=5A ;IB=1A
BUT76
IC=6A ;IB=1.2A
BUT76A
IC=5A ;IB=1A
BUT76
VCE=850V; VBE=0
Tj=150℃
BUT76A
VCE=1000V; VBE=0
Tj=150℃
Base-emitter
saturation voltage
Collector
cut-off current
UNIT
400
BUT76A
V(BR)EBO
MIN
固
hFE
DC current gain
IC=8A ; VCE=3V
COB
Output capacitance
IE=0 ;VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ;VCE=10V
V
1.6
V
0.5
2.0
体
导
半
电
1.5
mA
0.5
2.0
3.2
150
pF
7
MHz
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUT76
IC=6A ;IB1=-IB2=1.2A;VCE=150V
For BUT76A
IC=5A ;IB1=-IB2=1A;VCE=150V
2
1.0
μs
3.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT76 BUT76A
PACKAGE OUTLINE
体
导
半
电
固
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3