Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A ・ DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply ・Motor control and relay driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER 固电 BUT76 VCBO Collector-base voltage 体 半导 CONDITIONS BUT76 Collector-emitter voltage Emitter-base voltage V 1000 400 Open base BUT76A VEBO UNIT 850 Open emitter BUT76A VCEO VALUE V 450 Open collector 7 V IC Collector current 12 A ICM Collector current-peak 20 A IBM Base current-peak 6 A Ptot Total power dissipation 110 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.13 K/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUT76 V(BR)CEO Collector-emitter breakdown voltage VBEsat ICES MAX IC=500mA ;LC=125mH Emitter-base breakdown voltage BUT76 VCEsat TYP. V 450 IE=1mA ;IC=0 6 V IC=6A ;IB=1.2A Collector-emitter saturation voltage BUT76A IC=5A ;IB=1A BUT76 IC=6A ;IB=1.2A BUT76A IC=5A ;IB=1A BUT76 VCE=850V; VBE=0 Tj=150℃ BUT76A VCE=1000V; VBE=0 Tj=150℃ Base-emitter saturation voltage Collector cut-off current UNIT 400 BUT76A V(BR)EBO MIN 固 hFE DC current gain IC=8A ; VCE=3V COB Output capacitance IE=0 ;VCB=10V;f=1MHz fT Transition frequency IC=1A ;VCE=10V V 1.6 V 0.5 2.0 体 导 半 电 1.5 mA 0.5 2.0 3.2 150 pF 7 MHz Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT76 IC=6A ;IB1=-IB2=1.2A;VCE=150V For BUT76A IC=5A ;IB1=-IB2=1A;VCE=150V 2 1.0 μs 3.0 μs 0.8 μs Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A PACKAGE OUTLINE 体 导 半 电 固 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3