ISC BUV42

Inchange Semiconductor
Product Specification
BUV42
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Fast switching times
・Low collector saturation voltage
APPLICATIONS
・For switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
体
半导
UNIT
350
V
250
V
7
V
12
A
Collector current-peak
18
A
IB
Base current
2.5
A
IBM
Base current-peak
4
A
PT
Total power dissipation
120
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.46
℃/W
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
ICM
D
N
O
IC
Open emitter
M
E
S
NE
G
A
H
INC
Collector current
CONDITIONS
R
O
T
UC
VALUE
固电
PARAMETER
Open base
Open collector
TC≤25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BUV42
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; L=25mH
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=2A; IB=0.13A
Tj=100℃
0.8
0.9
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100℃
0.9
1.2
V
VCEsat-3
Collector-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100℃
1.2
1.5
V
VBEsat-1
Base-emitter saturation voltage
IC=4A; IB=0.4A
Tj=100℃
1.3
V
VBEsat-2
Base-emitter saturation voltage
IC=6A; IB=0.75A
Tj=100℃
1.5
V
ICEV
IEBO
CONDITIONS
导体
半
电
固
Collector cut-off current
VCE=VCEV; VBE=-1.5V
TC=100℃
VEB=5V; IC=0
G
A
H
INC
Switching times resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC=6A ;IB1=0.75A
RB2=3.3Ω; VCC=200V
VBB=-5V; Tp=30μs
2
TYP.
MAX
UNIT
250
V
7
V
R
O
T
UC
0.5
2.0
mA
1
mA
0.3
0.4
μs
1.0
1.6
μs
0.15
0.3
μs
D
N
O
IC
M
E
S
NE
Emitter cut-off current
MIN
Inchange Semiconductor
Product Specification
BUV42
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
NE
G
A
H
INC
Fig.2 Outline dimensions
3