Inchange Semiconductor Product Specification BUX47 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 9 A ICM Collector current-peak 15 A IB Bast current 8 A IBM Bast current-peak 10 A PT Total power dissipation 125 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 1.2 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUX47 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0; VCEsat-1 Collector-emitter saturation voltage IC=6A;IB=1.2 A VCEsat-2 Collector-emitter saturation voltage IC=9A;IB=3 A Base-emitter saturation voltage ICEV MIN TYP. MAX 400 V 30 V 1.5 V 3 V IC=6A;IB=1.2 A 1.6 V Collector cut-off current VCE=850V;VBE=-2.5V TC=125℃ 0.15 1.5 mA IEBO Emitter cut-off current VEB=5V;IC=0 1 mA hFE DC current gain IC=1A ;VCE=5V VBEsat 7 UNIT 15 50 Switching times Ton Turn-on time ts Storage time tf Fall time IC=6A;IB1=-IB2=1.2A; VCC=150V 2 0.8 μs 2.5 μs 0.8 μs Inchange Semiconductor Product Specification BUX47 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3