Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High speed ・Low collector saturation voltage APPLICATIONS ・They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 体 导 电半 固 Absolute maximum ratings(Ta=℃) SYMBOL VCBO CONDITIONS 2N5038 S G N HA Collector-base voltage Open emitter 2N5039 VCEO VEBO N O C EMI PARAMETER INC 2N5038 Collector-emitter voltage R O T DUC VALUE 150 Emitter-base voltage Open collector V 120 90 Open base 2N5039 UNIT V 75 7 V IC Collector current 20 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation 140 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX PARAMETER CONDITIONS Collector-emitter sustaining voltage 2N5038 IC=12A ;IB=1.2A 2N5039 IC=10A ;IB=1A Collector-emitter saturation voltage Base-emitter saturation voltage 1.0 V IC=20A ;IB=5A 2.5 V IC=20A ;IB=5A 3.3 V 1.8 V 20 mA 2N5038 IC=12A ; VCE=5V 2N5039 IC=10A ; VCE=5V 2N5038 VCE=70V; IB=0 2N5039 VCE=55V; IB=0 Collector cut-off current 固 2N5038 Collector cut-off current 2N5039 hFE-2 DC current gain VCE=140V; VBE=-1.5V VCE=100V; VBE=-1.5V ;TC=150℃ VCE=110V; VBE=-1.5V VCE=85V; VBE=-1.5V TC=150℃ R O T UC 5.0 10 5.0 10 D N O C I M E NG S A H C IN DC current gain Is/b V Base-emitter on voltage 体 导 电半 IC=2A ; VCE=5V 2N5038 IC=12A ; VCE=5V 2N5039 IC=10A ; VCE=5V Second breakdown collector current VCE=28V, VCE=45V(t=1.0s Nonrepetitive) mA 5 VEB=5V; IC=0 2N5039 UNIT 75 2N5038 hFE-1 MAX 90 2N5039 Collector-emitter saturation voltage Emitter cut-off current TYP IC=0.2A ;IB=0 2N5038 IEBO MIN mA 15 50 250 20 100 5 0.9 A Switching times tr Rise time ts Storage time tf Fall time For 2N5038 IC=12A ;IB1=- IB2=1.2A ;VCC=30V For 2N5039 IC=10A ;IB1=- IB2=1A ;Vcc=30V 2 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI S G N HA INC R O T DUC Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3