ISC 2N5038

Inchange Semiconductor
Product Specification
2N5038 2N5039
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High speed
・Low collector saturation voltage
APPLICATIONS
・They are especially intended for high current
and fast switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
体
导
电半
固
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
CONDITIONS
2N5038
S
G
N
HA
Collector-base voltage
Open emitter
2N5039
VCEO
VEBO
N
O
C
EMI
PARAMETER
INC
2N5038
Collector-emitter voltage
R
O
T
DUC
VALUE
150
Emitter-base voltage
Open collector
V
120
90
Open base
2N5039
UNIT
V
75
7
V
IC
Collector current
20
A
ICM
Collector current-peak
30
A
IB
Base current
5
A
PD
Total Power Dissipation
140
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N5038 2N5039
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
VBE
ICEO
ICEX
PARAMETER
CONDITIONS
Collector-emitter
sustaining voltage
2N5038
IC=12A ;IB=1.2A
2N5039
IC=10A ;IB=1A
Collector-emitter saturation voltage
Base-emitter saturation voltage
1.0
V
IC=20A ;IB=5A
2.5
V
IC=20A ;IB=5A
3.3
V
1.8
V
20
mA
2N5038
IC=12A ; VCE=5V
2N5039
IC=10A ; VCE=5V
2N5038
VCE=70V; IB=0
2N5039
VCE=55V; IB=0
Collector cut-off current
固
2N5038
Collector cut-off current
2N5039
hFE-2
DC current gain
VCE=140V; VBE=-1.5V
VCE=100V; VBE=-1.5V ;TC=150℃
VCE=110V; VBE=-1.5V
VCE=85V; VBE=-1.5V TC=150℃
R
O
T
UC
5.0
10
5.0
10
D
N
O
C
I
M
E
NG S
A
H
C
IN
DC current gain
Is/b
V
Base-emitter on voltage
体
导
电半
IC=2A ; VCE=5V
2N5038
IC=12A ; VCE=5V
2N5039
IC=10A ; VCE=5V
Second breakdown collector current
VCE=28V,
VCE=45V(t=1.0s Nonrepetitive)
mA
5
VEB=5V; IC=0
2N5039
UNIT
75
2N5038
hFE-1
MAX
90
2N5039
Collector-emitter
saturation voltage
Emitter cut-off current
TYP
IC=0.2A ;IB=0
2N5038
IEBO
MIN
mA
15
50
250
20
100
5
0.9
A
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;VCC=30V
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
2
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2N5038 2N5039
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
S
G
N
HA
INC
R
O
T
DUC
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3