SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION ·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage APPLICATIONS ·Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUW12 BUW12A BUW12 BUW12A Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A PT Total power dissipation 125 W Tj Junction temperature 150 Tstg Storage temperature -65~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BUW12 MIN TYP. MAX UNIT 400 IC=0.1A ; IB=0; L=25mH BUW12A V 450 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V 1.0 mA 10 mA ICES Collector cut-off current BUW12 BUW12A VCE=850V; VBE=0 VCE=1000V; VBE=0 IEBO Emitter cut-off current VEB=9V; IC=0 hFE DC current gain IC=1A ; VCE=5V 15 50 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUW12 BUW12A