isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25℃) SYMBOL VCER VCES PARAMETER Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage (VBE= 0) VALUE UNIT 1200 V 1200 V 600 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak tp< 5ms 30 A IB Base Current-Continuous 4 A IBM Base Current-peak tp< 5ms 20 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX48B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 600 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω 1200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 4A 2.0 V ICER Collector Cutoff Current VCE= 1200V; RBE= 10Ω VCE= 1200V; RBE= 10Ω; TC=125℃ 0.5 4.0 mA ICES Collector Cutoff Current VCE= 1200V; VBE= 0 VCE= 1200V; VBE= 0; TC=125℃ 0.5 3.0 mA ICEO Collector Cutoff Current VCE= 600V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA 1.0 μs 3.0 μs 0.7 μs B B MIN MAX UNIT Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 6A; IB1=-IB2= 1.5A; VCC= 250V