SavantIC Semiconductor Product Specification MJF44H11 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Fast switching speeds ·Low collector saturation voltage ·Complement to type MJF45H11 APPLICATIONS ·For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A PD Total power dissipation TC=25 36 Ta=25 2.0 Tj Junction temperature 150 Tstg Storage temperature -55~150 W THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 3.5 /W Rth j-A Thermal resistance from junction to ambient 62.5 /W SavantIC Semiconductor Product Specification MJF44H11 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=30mA IB=0, VCE(sat) Collector-emitter saturation voltage IC=8A; IB=0.4A 1.0 V VBE(sat) Base-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V ICES Collector cut-off current VCE=RatedBVCEO; VBE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=2A ; VCE=1V 60 hFE-2 DC current gain IC=4A ; VCE=1V 40 fT Transition frequency IC=0.5A ; VCE=10V,f=20MHz 50 MHz Ccb Collector capacitance f=1MHz ; VCB=10V 130 pF 0.3 µs 0.5 µs 0.14 µs 80 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=0.5A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJF44H11