isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage: VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF840 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage · isc Website：www.iscsemi.cn MIN MAX 500 2 UNIT V 4 V 0.85 Ω ±500 nA VDS= 500V; VGS=0 250 nA IS= 8A; VGS=0 2.0 V