MTP7N60 - New Jersey Semiconductor

i, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTP7N60
N-Channel Mosfet Transistor
• FEATURES
• Drain Current -ID= 7A@ TC=25°C
• Drain Source Voltage: VDSS= 600V(Min)
• Static Drain-Source On-Resistance
:RDs<on)=1.0Q(Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
0(2)
* *~\
1
i!
•*
8
^•y
iyr
VALUE
-» *S
—1500
r
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
i H*
! ~r
wwov
\
p
K
Drain Current-Continuous
F
A
f
ID
*H
* v nf
, ^
MQ
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
LGate
2. Drain
3. Source
TO-220C package
•?,
DESCRITION
Designed for high efficiency switch mode power supply.
PARAMETER
S(3)
PIN
1 2
SYMBOL
a 4)
^3^
0(1) I
°~/™
7
A
I
»•!* j
IT*
*
G
(-
—»
f
I DM
Drain Current-Single Plused
PD
Total Dissipation @Tc=25"C
Tj
Tstg
28
I
Max. Operating Junction Temperature
Storage Temperature
125
,
A
W
150
r
-55-150
-c
'
mm
WIN
DIM
15.70
A
9.90
B
C
4.20
D
0.70
3.40
F
<3
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
Rth j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Quality Semi-Conductors
MAX
UNIT
1.0
"C/W
62.5
°c/w
H
J
K
L
Q
R
S
u
V
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
\
soi->
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
F1.30
2.90
2.70
1.31
6.65 1
8.86
RK
ELECTRICAL
CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
Vcs(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
Ros(on)
Drain-Source On-Resistance
less
V(BR)DSS
MIN
MAX
600
2
UNIT
V
4
V
V GS =10V;I D =3.5A
1.0
Q
Gate-Body Leakage Current
VGS= +20V;VDS=0
±100
nA
loss
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
1
uA
VSD
Forward On-Voltage
ls= 7A; VGS= 0
1.8
V