i, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP7N60 N-Channel Mosfet Transistor • FEATURES • Drain Current -ID= 7A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min) • Static Drain-Source On-Resistance :RDs<on)=1.0Q(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements 0(2) * *~\ 1 i! •* 8 ^•y iyr VALUE -» *S —1500 r UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V i H* ! ~r wwov \ p K Drain Current-Continuous F A f ID *H * v nf , ^ MQ ABSOLUTE MAXIMUM RATINGS(Ta=25°C) LGate 2. Drain 3. Source TO-220C package •?, DESCRITION Designed for high efficiency switch mode power supply. PARAMETER S(3) PIN 1 2 SYMBOL a 4) ^3^ 0(1) I °~/™ 7 A I »•!* j IT* * G (- —» f I DM Drain Current-Single Plused PD Total Dissipation @Tc=25"C Tj Tstg 28 I Max. Operating Junction Temperature Storage Temperature 125 , A W 150 r -55-150 -c ' mm WIN DIM 15.70 A 9.90 B C 4.20 D 0.70 3.40 F <3 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Quality Semi-Conductors MAX UNIT 1.0 "C/W 62.5 °c/w H J K L Q R S u V 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 \ soi-> MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 F1.30 2.90 2.70 1.31 6.65 1 8.86 RK ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA Vcs(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA Ros(on) Drain-Source On-Resistance less V(BR)DSS MIN MAX 600 2 UNIT V 4 V V GS =10V;I D =3.5A 1.0 Q Gate-Body Leakage Current VGS= +20V;VDS=0 ±100 nA loss Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 uA VSD Forward On-Voltage ls= 7A; VGS= 0 1.8 V