isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= -100V(Min) ·Complement to type PMD12K100 APPLICATIONS ·Designed for general purpose amplifier and DC motor control applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w IC Collector Current -Continuous ICP Collector Current-Peak IB Base Current PC UNIT -100 -100 -5.0 V V V -8 A -16 A -0.12 A Collector Power Dissipation@TC=50℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor PMD13K100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -100 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 2.2kΩ -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -16mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -67V; RBE= 2.2KΩ -5.0 mA IEBO Emitter Cut-off current -3.0 mA hFE DC Current Gain COB Output Capacitance B B n c . i m e s c s i . w w w isc Website：www.iscsemi.cn MIN VEB= -5V; IC= 0 IC= -4A; VCE= -3V IE= 0; VCB= -10V; ftest= 1.0MHz 2 800 MAX UNIT 20000 200 pF