JMnic Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 24 A IB Base current 5 A IE Emitter current 17 A IEM Emitter current-peak 34 A PC Collector power dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ JMnic Product Specification 2N6569 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=2.4A 4.0 V Base-emitter saturation voltage IC=4A; IB=0.4A 2.0 V ICEO Collector cut-off current VCE=40V; IB=0 1.0 mA ICBO Collector cut-off current VCB=45V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=3V 15 200 hFE-2 DC current gain IC=12A ; VCE=4V 5 100 Transition frequency IC=1.0A ; VCE=4V;f=0.5MHz 1.5 20 MHz 0.4 μs 1.5 μs 5.0 μs 1.5 μs VBEsat fT 40 UNIT V Switching times td Delay time tr Rise time tstg tf IC=2A; IB1=-IB2=0.2A VCC=30V; tp=25μs; Duty Cycle≤2.0% Storage time Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 1.75 ℃/W JMnic Product Specification 2N6569 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3