JMnic Product Specification 2SB1034 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・DARLINGTON APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -8 V IC Collector current (DC) -2 A IB Base current (DC) -0.5 A PC Total power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1034 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-8V; IC=0 -4 mA hFE DC current gain IC=-1A ; VCE=-2V COB Output capacitance IE=0; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=-0.5A ; VCE=-2V 50 MHz 0.4 μs 2.0 μs 0.4 μs -80 UNIT V 2000 Switching times ton Turn-on time ts Storage time tf Fall time RL=30Ω IB1=IB2=1mA VCC=-30V 2 JMnic Product Specification 2SB1034 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3