JMnic Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of hFE ・Low collector to emitter saturation voltage ・Complement to type 2SD1985/1985A APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB1393 VCBO Collector-base voltage -60 Open base 2SB1393A VEBO Emitter-base voltage IC V -80 2SB1393 Collector-emitter voltage UNIT -60 Open emitter 2SB1393A VCEO VALUE V -80 Open collector -5 V Collector current (DC) -3 A ICM Collector current-Peak -5 A PC Collector power dissipation TC=25℃ 25 W Ta=25℃ 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SB1393 MIN TYP. MAX UNIT -60 IC=-30mA , IB=0 V -80 2SB1393A Collector-emitter saturation voltage IC=-3A; IB=-0.375A -1.2 V VBE Base-emitter voltage VCE=-4V; IC=-3A -1.8 V ICES Collector cut-off current -200 μA -300 μA -1.0 mA ICEO Collector cut-off current 2SB1393 VCE=-60V ;VBE=0 2SB1393A VCE=-80V; VBE=0 2SB1393 VCE=-30V; IB=0 2SB1393A VCE=-60V; IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 70 hFE-2 DC current gain IC=-3A ; VCE=-4V 10 Transition frequency IC=-0.1A; VCE=-5V;f=1MHz fT 250 20 MHz 0.5 μs 1.2 μs 0.3 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-1A ;IB1=-0.1A IB2=0.1A;VCC=-50V hFE-1 Classifications Q P 70-150 120-250 2 JMnic Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SB1393 2SB1393A Silicon PNP Power Transistors 4