Transistors IC SMD Type Silicon PNP Epitaxial 2SA1588 Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Base current IB -50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 ìA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ìA DC current gain hFE VCE=-1V, IC=-100mA VCE (sat) IC=-100mA, IB=-10mA fT VCE=-1V, IC=-100mA Collector output capacitance Cob VCE=-6V, IC=-20mA Noise figure NF VCB=-6V, IE=0, f=1MHz Collector-emitter saturation voltage Transition frequency 70 400 -0.1 -0.3 80 V MHz 4 7 pF 1.0 10 dB hFE Classification Marking ZO ZY hFE 70 140 120 240 www.kexin.com.cn 1