KEXIN 2SC3295

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC3295
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High voltage: VCEO = 50 V.
1
0.55
High hFE: hFE = 600 3600.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
High collector current: IC = 150 mA (max).
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Small package.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Tstg
-55 to +125
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
DC current gain
hFE
VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
600
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT
Collector output capacitance
Noise figure
0.12
100
0.25
V
250
MHz
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF(1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
0.5
dB
NF(2)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ
0.3
dB
Cob
VCE = 10 V, IC = 10 mA
3600
hFE Classification
Marking
hFE
PA
600
1800
PB
1200 3600
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