Transistors IC SMD Type Silicon NPN Epitaxial 2SC3295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage: VCEO = 50 V. 1 0.55 High hFE: hFE = 600 3600. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current: IC = 150 mA (max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small package. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA DC current gain hFE VCE = 6 V, IC = 2 mA Collector-emitter saturation voltage 600 VCE (sat) IC = 100 mA, IB = 10 mA Transition frequency fT Collector output capacitance Noise figure 0.12 100 0.25 V 250 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF NF(1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ 0.5 dB NF(2) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ 0.3 dB Cob VCE = 10 V, IC = 10 mA 3600 hFE Classification Marking hFE PA 600 1800 PB 1200 3600 www.kexin.com.cn 1