Transistors SMD Type Silicon NPN Epitaxial Type 2SC2713 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High hFE 1 Low noise. 0.55 High voltage VCEO=120V +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small package. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 120 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA hFE VCE = 6 V, IC = 2 mA DC current gain Collector-emitter saturation voltage Testconditons Min Typ 200 700 VCE (sat) IC = 10 mA, IB = 1 mA Transition frequency fT VCE = 6 V, IC = 1 mA Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz Noise figure NF VCB=6 V, IC=0.1 mA, f=1 kHz,Rg=10 kÙ 0.3 100 MHz 3 1.0 V pF 10 dB hFE Classification Marking DG DL Rank GR BL hFE 200 400 350 700 www.kexin.com.cn 1