Transistors SMD Type PNP Silicon Transistor 2SA1412-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High speed:tr 0.7ìs +0.15 5.55 -0.15 High Voltage: VCEO=-400V 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collector to Emitter Voltage VCEO -400 V Emitter to Base Voltage VEBO -7 V Collector Current (DC) IC -2 A Collector Current (Pulse) *1 IC -4 A PT 2 W Total power Dissipation (Ta=25 ) *2 Junction Tmeperature Tj 150 Storage Temperature Tstg -55 to 150 *1 pw 10ms,Duty Cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm www.kexin.com.cn 1 Transistors SMD Type 2SA1412-Z Electrical Characteristics Ta = 25 Parameter Symbol Collector Cutoff Current ICBO VCB=-400V,IE=0 Emitter Cutoff Current IEBO VEB=-5V,IC=0 DC Current Gain* hFE Min Typ VCE=-5V,IC=-0.1A 40 60 VCE=-5V,IC=-1.0A 10 22 Max Unit -10 ìA -10 ìA 120 Collector Saturation Voltage * VCE(sat) IC=-0.5A,IB=-0.1A -0.25 -0.5 V Base Saturation Voltage * VBE(sat) IC=-0.5mA,IB=-0.1mA -0.85 -1.2 V fT VCE=-10V,IE=-100mA 40 Gain Bandwidth Product MHz Output Capacitance Cob VCB=-10V,IE=0,f=1.0MHz Turn-on Time ton IC=-1A,RL=150Ù 0.03 0.5 Storage Time tstg IB1=-IB2=-0.2A,VCC=-150V 1.4 2 0.1 0.7 Fall time * PW tf 350ìs,Duty Cycle 2% hFE Classification 2 Testconditons Marking L K hFE 40 to 80 60 to 120 www.kexin.com.cn 30 pF ìs