Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4446 Features Very small-sized package High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 150 mA Collector current(Pulse) ICP 300 mA Base current IB 30 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SC4446 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE = 6V , IC = 1mA fT VCE = 6V , IC = 1mA Gain bandwidth product Testconditons 600 130 VBE(sat) IC = 50mA , IB = 5mA Base-to-emitter saturation voltage Typ 135 VCE(sat) IC = 50mA , IB = 5mA Collector-to-emitter saturation voltage MHz 0.15 0.5 0.85 1.2 V V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 pF ton 50 ns tstg 590 ns tf 110 ns Cob Turn-on time Storage time VCB = 6V, f = 1MHz hFE Classification H Marking Rank 5 6 7 hFE 135 270 200 400 300 600 www.kexin.com.cn V 2.2 Output capacitance Fall time 2 Min