Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current Gain: hFE = 1000 to 3200. 0.4 3 1 0.55 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 12 V Collector current (DC) IC 150 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 50V, IE=0 Testconditons 100 nA Emitter cutoff current IEBO VEB = 10V, IC=0 100 nA DC current gain * hFE VCE = 5V , IC = 1mA Base-emitter voltage * VBE VCE = 5V , IC = 1mA Collector-emitter saturation voltage * VCE(sat) IC = 50mA , IB = 5mA Base-emitter saturation voltage * VBE(sat) IC = 50mA , IB = 5mA Gain bandwidth product fT Output capacitance VCE = 5V , IE = -10mA Min 1000 Typ 1800 3200 0.56 V 0.07 0.3 0.8 1.2 V V 250 MHz 3 pF Cob VCB = 5V , IE = 0 , f = 1.0MHz Turn-on time ton VCC = 10V , VBE(off) = -2.7V 0.13 ns Storage time tstg IC = 50mA , 0.72 ns Turn-off time toff IB1 = -IB2 = 1mA 1.22 ns *. PW 350ìs,duty cycle 2% hFE Classification Marking L17 L18 hFE 1000 2000 1600 3200 www.kexin.com.cn 1