Transistors IC SMD Type Silicon PNP Epitaxial 2SA1052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -30 V Collector to emitter voltage VCEO -30 V Emitter to base voltage VEBO -5 V Collector current IC -100 mA Emitter current IE 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -30 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -30 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Collector cutoff current ICBO VCB = -20 V, IE = 0 -0.5 mA Emitter cutoff current IEBO VEB = -2 V, IC = 0 -0.5 mA hFE VCE = -12 V, IC = -2 mA DC current transfer ratio VCE(sat) IC = -10 mA, IB = -1 mA Collector to emitter saturation voltage Base to emitter voltage VBE VCE = -12 V, IC = -2 mA 100 500 -0.2 V -0.75 V hFE Classification Marking MB MC MD hFE 100 200 160 320 250 500 www.kexin.com.cn 1