Transistors IC SMD Type Silicon PNP Epitaxial 2SA1484 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90 V Collector to emitter voltage VCEO -90 V Emitter to base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -90 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -90 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Collector cutoff current ICBO VCB = -70 V, IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -2 V, IC = 0 -0.1 ìA hFE VCE = -12 V, IC = -2 mA ( * ) DC current transfer ratio 250 800 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB = -1 mA ( * ) -0.15 V Base to emitter saturation voltage VBE(sat) IC = -10 mA, IB = -1 mA ( * ) -1 V * Pulse test. hFE Classification Marking IRD hFE 250 500 IRE 400 800 www.kexin.com.cn 1