KEXIN 2SC4519

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4519
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Low collector-to-emitter saturation voltage.
1
0.55
Adoption of FBET process.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Fast switching speed.
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Small-sized package.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector current (pulse)
Icp
1
A
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SC4519
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 45V, IE=0
0.5
ìA
Emitter cutoff current
IEBO
VEB = 3V, IC=0
0.5
ìA
DC current gain
hFE
VCE = 2V , IC = 50mA
fT
VCE = 2V , IC = 50mA
Gain bandwidth product
Output capacitance
Cob
Testconditons
Typ
100
VCB = 10V , f = 1.0MHz
400
360
MHz
4
pF
Collector-emitter saturation voltage
VCE(sat) IC = 200mA , IB = 10mA
0.15
0.45
V
Base-emitter saturation voltage
VBE(sat) IC = 200mV , IB = 10mA
0.8
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
45
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Turn-on time
ton
60
120
ns
Storage time
tstg
150
270
ns
tf
200
350
ns
Fall time
hFE Classification
TT
Marking
2
Min
Rank
4
5
6
hFE
100 200
140 280
200 400
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