Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4521 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Collector current (pulse) ICP 6 A Collector dissipation,mounted on ceramic board(250mm2X0.8mm) PC 1.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4521 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 45V, IE=0 Emitter cutoff current IEBO VEB = 2V, IC=0 DC current gain hFE VCE = 2V , IC = 500mA fT VCE = 2V , IC = 500mA Cob VCB = 10V , f = 1.0MHz Gain bandwidth product Output capacitance Typ 100 Max Unit 1 ìA 10 ìA 400 300 MHz 25 pF Collector-emitter saturation voltage VCE(sat) IC = 1.5 A , IB = 75 mA 0.25 0.7 V Base-emitter saturation voltage VBE(sat) IC = 1.5 V , IB = 75 mA 0.95 1.3 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 45 V Emitter-base breakdown voltage V(BR)EBO IE = 100ìA , IC = 0 5 V Turn-on time ton 50 100 ns Storage time tstg 150 270 ns tf 180 350 ns Fall time hFE Classification CL Marking 2 Min Rank R S T hFE 100 200 140 280 200 400 www.kexin.com.cn