Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High breakdown voltage : VCEO=50V. 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacitiy and high fT. +0.05 0.1-0.01 +0.1 0.97-0.1 Ultrasmall-sized package permitting sets 0-0.1 +0.1 0.38-0.1 to be smallsized, slim. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector current (pulse) ICP 800 mA Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = 40V , IE = 0 0.1 ìA Emitter cutoff current IEBO VEB = 4V , IC = 0 0.1 ìA DC current Gain hFE VCE = 5V , IC = 10mA fT VCE = 10V , IC = 50mA 300 MHz Cob VCB = 10V , f = 1MHz 3.7 pF Gain bandwidth product Common base output capacitance Testconditons Min Typ 100 560 Collector-to-emitter saturation voltage VCE(sat) IC = 100mA , IB =10mA 0.1 0.3 V Base-to-emitter saturation voltage VBE(sat) IC = 100mA , IB =10mA 0.8 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 100ìA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 Turn-on time ton Storage time tstg Fall time VCC = 20V, IC = 10IB1 = -10IB2 = 100mA tf V 70 ns 400 ns 70 ns hFE Classification AY Marking Rank hFE 4 100 200 5 6 7 140 280 200 400 280 560 www.kexin.com.cn 1