KEXIN 2SC3392

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SC3392
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
High breakdown voltage : VCEO=50V.
0.55
Adoption of FBET process.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Large current capacitiy and high fT.
+0.05
0.1-0.01
+0.1
0.97-0.1
Ultrasmall-sized package permitting sets
0-0.1
+0.1
0.38-0.1
to be smallsized, slim.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector current (pulse)
ICP
800
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = 40V , IE = 0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
0.1
ìA
DC current Gain
hFE
VCE = 5V , IC = 10mA
fT
VCE = 10V , IC = 50mA
300
MHz
Cob
VCB = 10V , f = 1MHz
3.7
pF
Gain bandwidth product
Common base output capacitance
Testconditons
Min
Typ
100
560
Collector-to-emitter saturation voltage
VCE(sat) IC = 100mA , IB =10mA
0.1
0.3
V
Base-to-emitter saturation voltage
VBE(sat) IC = 100mA , IB =10mA
0.8
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 100ìA , RBE =
50
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
Turn-on time
ton
Storage time
tstg
Fall time
VCC = 20V, IC = 10IB1 = -10IB2 = 100mA
tf
V
70
ns
400
ns
70
ns
hFE Classification
AY
Marking
Rank
hFE
4
100
200
5
6
7
140 280
200 400
280 560
www.kexin.com.cn
1