Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4104 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small reverse transfer capacitance. 0.55 High fT. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Adoption of FBET process. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 4 V IC 50 mA Collector current Collector current (pulse) Icp 100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 3V, IC=0 1.0 ìA DC current gain hFE VCE = 10V , IC = 10mA 60 350 Gain bandwidth product Base-collector time constant Output capacitance Reverse transfer capacitance 270 fT VCE = 10V , IC = 10mA 700 MHz rbb,cc VCE = 10V , IC = 10mA 8 ps Cob VCB = 10V , f = 1.0MHz 1.3 pF Cre VCB = 10V , f = 1.0MHz 1.0 pF Collector-emitter saturation voltage VCE(sat) IC = 20mA , IB = 2mA 0.5 V Base-emitter saturation voltage VBE(sat) IC = 20mA , IB = 2mA 1.0 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 70 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 60 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 4 V hFE Classification YY Marking Rank hFE 3 60 120 4 90 180 5 135 270 www.kexin.com.cn 1