KEXIN 2SC4104

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4104
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Small reverse transfer capacitance.
0.55
High fT.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Adoption of FBET process.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
70
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
4
V
IC
50
mA
Collector current
Collector current (pulse)
Icp
100
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 3V, IC=0
1.0
ìA
DC current gain
hFE
VCE = 10V , IC = 10mA
60
350
Gain bandwidth product
Base-collector time constant
Output capacitance
Reverse transfer capacitance
270
fT
VCE = 10V , IC = 10mA
700
MHz
rbb,cc
VCE = 10V , IC = 10mA
8
ps
Cob
VCB = 10V , f = 1.0MHz
1.3
pF
Cre
VCB = 10V , f = 1.0MHz
1.0
pF
Collector-emitter saturation voltage
VCE(sat) IC = 20mA , IB = 2mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC = 20mA , IB = 2mA
1.0
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
70
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
60
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
4
V
hFE Classification
YY
Marking
Rank
hFE
3
60
120
4
90
180
5
135
270
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