KEXIN 2SB1120

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SB1120
Features
Low collector-to-emitter saturation voltage :
VCE(sat)max=-0.45V.
Large current capacity : IC=-2.5A, ICP=-5A.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-20
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-2.5
A
Collector current (pulse)
ICP
-5
A
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -16V , IE = 0
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
DC current Gain
hFE
Gain bandwidth product
fT
Collector-emitter saturation voltage
Min
VCE = -2V , IC = -500mA
100
VCE=-2V
70
IC=-3A
VCE = -10V , IC = -50mA
Typ
Max
Unit
-100
nA
-100
nA
560
250
VCE(sat) IC = -1.5A , IB = -0.15A
-0.25 -0.45
MHz
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-20
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-10
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-7
V
Output capacitance
Cob
VCB = -10V , f = 1MHz
70
pF
hFE Classification
BC
Marking
Rank
E
F
G
hFE
100 200
160 320
280 560
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