Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V Collector current IC -2.5 A Collector current (pulse) ICP -5 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -16V , IE = 0 Emitter cutoff current IEBO VCB = -4V , IE = 0 DC current Gain hFE Gain bandwidth product fT Collector-emitter saturation voltage Min VCE = -2V , IC = -500mA 100 VCE=-2V 70 IC=-3A VCE = -10V , IC = -50mA Typ Max Unit -100 nA -100 nA 560 250 VCE(sat) IC = -1.5A , IB = -0.15A -0.25 -0.45 MHz V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -10 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -7 V Output capacitance Cob VCB = -10V , f = 1MHz 70 pF hFE Classification BC Marking Rank E F G hFE 100 200 160 320 280 560 www.kexin.com.cn 1