Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Collector current (pulse) ICP 3 A Base current IB 300 mA Collector dissipation,mounted on ceramic board(250mm2X0.8mm) PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4984 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 12 V, IE=0 100 nA Emitter cutoff current IEBO VEB = 4 V, IC=0 100 nA DC current gain hFE VCE = 2V , IC = 50mA fT VCE = 2V , IC = 50mA 200 MHz VCB = 10V , f = 1.0MHz 10 pF Gain bandwidth product Output capacitance Cob Collector-emitter saturation voltage 140 560 IC = 5 mA , IB = 0.5 mA 10 25 IC = 500 mA , IB = 25 mA 120 240 VBE(sat) IC = 500 mA , IB = 25 mA 0.9 1.2 VCE(sat) Base-emitter saturation voltage mV mV Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 15 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 15 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V hFE Classification CT Marking 2 Min Rank S T U hFE 140 280 200 400 280 560 www.kexin.com.cn