Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4555 Features Very small-sized package Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector current(Pulse) ICP 1 A mW Collector dissipation PC 150 Junction temperature Tj 105 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Collector cutoff current ICBO VCB = 15V, IE=0 Emitter cutoff current IEBO VEB = 4V, IC=0 DC current gain hFE VCE = 2V , IC = 10mA fT VCE = 2V , IC = 50mA 300 VCB = 10V, f = 1MHz 4.0 Gain bandwidth product Output capacitance Cob Collector-to-emitter saturation voltage VCE(sat) 135 Unit 0.1 ìA 0.1 ìA 600 IC = 5mA , IB = 0.5mA MHz pF 30 IC = 200mA , IB = 10mA VBE(sat) IC = 200mA , IB = 10mA Base-to-emitter saturation voltage Max 160 300 0.95 1.2 V V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 20 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 15 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V hFE Classification UT Marking Rank 5 6 7 hFE 135 270 200 400 300 600 www.kexin.com.cn 1 SMD Type 2 www.kexin.com.cn Transistors IC