KEXIN 2SD1622

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD1622
Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Collector current (pulse)
ICP
2
A
PC
500
mW
W
Collector dissipation
PC *
1.3
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
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1
Transistors
SMD Type
2SD1622
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 50 V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 4 V, IC=0
100
nA
DC current gain
hFE
VCE = 2 V , IC = 100 mA
fT
VCE = 10 V , IC = 50 mA
Cob
VCB = 10 V , f = 1.0MHz
Gain bandwidth product
Output capacitance
Testconditons
Typ
100
560
150
MHz
8.5
pF
Collector-emitter saturation voltage
VCE(sat) IC = 500 mA , IB = 50 mA
120
300
mV
Base-emitter saturation voltage
VBE(sat) IC = 500 mA , IB = 50 mA
0.9
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Turn-on timie
ton
40
ns
Storage time
tstg
350
ns
Turn-off time
tf
30
ns
hFE Classification
DE
Marking
2
Min
Rank
R
S
T
U
hFE
100 200
140 280
200 400
280 560
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