Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1280 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Peak collector current ICP 2 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Collector-base cutoff current ICBO VCB = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 2 V, IC = 0.5 A 90 VCE = 2 V, IC = 1.5 A 50 Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA Transition frequency fT Collector output capacitance Cob 1 ìA 280 0.5 1.2 V V VCB = 6 V, IE = -50 mA, f = 200 MHz 150 MHz VCB = 6 V, IE = 0, f = 1 MHz 18 pF hFE Classification R Marking Rank Q R S hFE 90 155 130 210 180 280 www.kexin.com.cn 1