KEXIN 2SB1409S

Transistors
SMD Type
Silicon NPN Triple Diffused Type Transistor
2SB1409S
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-180
V
Collector to emitter voltage
VCEO
-160
V
Emitter to base voltage
VEBO
-5
V
IC
-1.5
A
IC(peak)
-3
A
W
Collector current
Collector peak current
PC*1
18
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector power dissipation
*1 Value at TC = 25 .
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = -1 mA, IE = 0
-180
Collector to emitter breakdown voltage
V(BR)CEO
IC = -10 mA, RBE =
-160
V
Emitter to base breakdown voltage
V(BR)EBO
IE = -1 mA, IC = 0
-5
V
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
VCB = -160 V, IE = 0
-10
VCE = -5 V, IC = -150 mA*
60
VCE = -5 V, IC = -500 mA*
30
ìA
200
VCE(sat)
IC= -500 mA, IB = -50 mA
-1
V
VBE
VCE = -5 V, IC = -150 mA
-1.5
V
fT
VCE = -5 V, IC = -150 mA
240
MHz
VCB = -10 A, IE = 0, f = 1 MHz
25
pF
Cob
* Pulse test.
hFE Classification
TYPE
B
C
hFE
60 to 120
100 to 200
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