Transistors SMD Type Silicon NPN Triple Diffused Type Transistor 2SB1409S TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -180 V Collector to emitter voltage VCEO -160 V Emitter to base voltage VEBO -5 V IC -1.5 A IC(peak) -3 A W Collector current Collector peak current PC*1 18 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector power dissipation *1 Value at TC = 25 . Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -1 mA, IE = 0 -180 Collector to emitter breakdown voltage V(BR)CEO IC = -10 mA, RBE = -160 V Emitter to base breakdown voltage V(BR)EBO IE = -1 mA, IC = 0 -5 V Collector cutoff current ICBO DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V VCB = -160 V, IE = 0 -10 VCE = -5 V, IC = -150 mA* 60 VCE = -5 V, IC = -500 mA* 30 ìA 200 VCE(sat) IC= -500 mA, IB = -50 mA -1 V VBE VCE = -5 V, IC = -150 mA -1.5 V fT VCE = -5 V, IC = -150 mA 240 MHz VCB = -10 A, IE = 0, f = 1 MHz 25 pF Cob * Pulse test. hFE Classification TYPE B C hFE 60 to 120 100 to 200 www.kexin.com.cn 1