Transistors SMD Type NPN Silicon Epitaxia 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current IC 2 A Collector current (Pulse) * IC 3 A Total power dissipation PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle 50% Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 30 V, IE = 0 Testconditons Min 100 nA Emitter cutoff current IEBO VEB = 10 V, IC = 0 100 nA DC current gain * hFE VCE = 5.0 V, IC = 1.0 A 800 VCE = 5.0 V, IC = 2.0 A 400 Collector saturation voltage VCE(sat) IC = 1 A, IB = 10 mA Base saturation voltage VBE(sat) IC = 1 A, IB = 10 mA Typ 1500 3200 0.18 0.3 V 0.83 1.2 V Base to emitter voltage * VBE VCE = 5.0 V, IC = 300 mA 600 660 700 mV Gain bandwidth product fT VCE = 10 V, IE = -500 mA 150 350 Output capacitance * Pulsed: PW VCB = 10 V, IE = 0 , f = 1.0 MHz Cob 350 ìs, duty cycle 26 MHz 35 pF 2% hFE Classification Marking VM VL VK hFE 800 1600 1200 2400 2000 3200 www.kexin.com.cn 1