Transistors SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low frequency power amplifier. Unit: mm +0.1 -0.1 0.127 max +0.25 2.65 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.28 1.50 -0.1 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Peak collector current ICP -3 A Collector power dissipation PC 18 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -1 mA, IE = 0 -35 V Collector to emitter breakdown voltage V(BR)CEO IC = -10 mA, RBE = -35 V Emitter to base breakdown voltage V(BR)EBO IE = -1 mA, IC = 0 -5 V Collector cutoff current ICBO DC current transfer ratio VCB = -35 V, IE = 0 hFE Base to emitter voltage 60 VCE = -2 V,IC = -1.5 A 20 VCE = -2 V,IC = -1.5 A VBE Collector to emitter saturation voltage -20 VCE = -2 V,IC = -0.5 A VCE(sat) IC = -2 A,IB = -0.2 A ìA 320 -1.5 V -1.0 V hFE Classification Rank B C D hFE 60 120 100 200 160 320 www.kexin.com.cn 1