Transistors IC SMD Type Silicon PNP Epitaxial 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB=-50V, IE=0 -0.1 ìA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ìA DC current gain hFE VCE=-6V, IC=-2mA Collector-emitter saturation voltage Min 70 VCE (sat) IC=-100mA, IB=-10mA Transition frequency fT VCE=-10V, IC=-1mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz Noise figure NF VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kÙ Typ 400 -0.1 -0.3 80 V MHz 4 7 pF 1.0 10 dB hFE Classification Marking SO SY SG hFE 70 140 120 240 200 400 www.kexin.com.cn 1