KEXIN 2SA1586

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1586
Features
High voltage and high current.
Excellent hFE linearity.
High hFE.
Low noise.
Small package.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Base current
IB
-30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Tstg
-55 to +125
Storage temperature range
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB=-50V, IE=0
-0.1
ìA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1
ìA
DC current gain
hFE
VCE=-6V, IC=-2mA
Collector-emitter saturation voltage
Min
70
VCE (sat) IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-10V, IC=-1mA
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise figure
NF
VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kÙ
Typ
400
-0.1
-0.3
80
V
MHz
4
7
pF
1.0
10
dB
hFE Classification
Marking
SO
SY
SG
hFE
70 140
120 240
200 400
www.kexin.com.cn
1