Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3125 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Good Lineality of fT 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector Power Dissipation PC 150 mW Junction temperature Storage temperature Range Tj 125 Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 30V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 3V, IC = 0 1.0 ìA Collector-emitter breakdown voltage DC current gain V(BR)CEO IC=10mA,IB=0 hFE Saturation Voltage Collector-Emitter VCE(sat) Saturation Voltage Baser-Emitter VBE(sat) Transition Frequency Testconditons VCE = 10 V, IC = 10mA Min Typ 25 20 V 70 200 0.2 IC=15mA,IB=1.5mA 1.5 fT VCE = 10 V, IC = 10mA Collector Output Capacitance Cob VCC=10V,IE=0,f=1MHz Collector-BaseTime Constant Cc.rbb' VCB=10V,IC=1mA,f=30MHz 250 600 1.1 V V MHz 1.6 pF 25 ps Marking Marking HH www.kexin.com.cn 1