Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3134 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Wide ASO and high durability against breakdown. 0.55 High VEBO. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 150 mA Collector current (pulse) Icp 300 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB=40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=10V, IC=0 0.1 ìA DC current gain hFE VCE=6V, IC=1mA fT VCE=6V, IC=1mA 100 MHz Cob VCB=6V, f=1MHz 2.2 pF Gain bandwidth product Output capacitance 90 VCE(sat) IC=50mA, IB=5mA Collector-emitter saturation voltage 560 0.5 V Collector-base breakdown voltage V(BR)CBO IC=10ìA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, RBE= 50 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA, IC=0 15 V hFE Classification H Marking Rank 4 5 6 7 hFE 90 180 135 270 200 400 300 600 www.kexin.com.cn 1