Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3661 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High DC current gain (hFE=800 to 3200). 1 Low collector-to-emitter saturation voltage (VCE(sat) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0.5V). +0.05 0.1-0.01 15V). 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency general-purpose amplifiers, drivers, muting circuit. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V IC 300 mA Collector current (pulse) Icp 500 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Collector current Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 20V, IE=0 Emitter cutoff current IEBO VEB = 10V, IC=0 DC current gain hFE VCE =5V , IC = 10mA Gain bandwidth product Output capacitance fT VCE = 10V , IC = 10mA Cob VCB = 10V , f = 1.0MHz Min 800 Typ 1500 Max Unit 0.1 ìA 0.1 ìA 3200 250 MHz 2.7 pF Collector-emitter saturation voltage VCE(sat) IC = 200mA , IB = 4mA 0.12 0.5 V Base-emitter saturation voltage VBE(sat) IC = 200mA , IB = 4mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , IB = 0 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Marking Marking FY www.kexin.com.cn 1