KEXIN 2SC4413

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4413
Features
Adoption of FBET process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Small Cob.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
100
mA
Collector current(Pulse)
ICP
200
mA
Base current
IB
20
mA
mW
Collector dissipation
PC
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 5V , IC = 10mA
fT
VCE = 10V , IC = 10mA
200
MHz
VCB = 10V, f = 1MHz
1.5
pF
Gain bandwidth product
Output capacitance
Cob
Testconditons
Min
800
Typ
1500
3200
Collector-to-emitter saturation voltage
VCE(sat) IC = 50mA , IB = 1mA
0.1
0.5
V
Base-to-emitter saturation voltage
VBE(sat) IC = 50mA , IB = 1mA
0.8
1.1
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
V
Marking
Marking
GY
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