Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 100 mA Collector current(Pulse) ICP 200 mA Base current IB 20 mA mW Collector dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE = 5V , IC = 10mA fT VCE = 10V , IC = 10mA 200 MHz VCB = 10V, f = 1MHz 1.5 pF Gain bandwidth product Output capacitance Cob Testconditons Min 800 Typ 1500 3200 Collector-to-emitter saturation voltage VCE(sat) IC = 50mA , IB = 1mA 0.1 0.5 V Base-to-emitter saturation voltage VBE(sat) IC = 50mA , IB = 1mA 0.8 1.1 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Marking Marking GY www.kexin.com.cn 1