KEXIN 2SC3689

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC3689
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Adoption of FBET process.
0.4
3
Small Cob (Cob=1.5pF typ).
1
Low collector-to-emitter saturation voltage (VCE(sat)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
15V).
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High VEBO (VEBO
0.5V).
0.55
High DC current gain (hFE=800 to 3200).
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
100
mA
Collector current (pulse)
Icp
200
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
0.1
ìA
DC current gain
hFE
VCE =5V , IC = 10mA
Gain bandwidth product
Output capacitance
Testconditons
Min
800
Typ
1500
3200
fT
VCE = 10V , IC = 10mA
200
MHz
Cob
VCB = 10V , f = 1.0MHz
1.5
pF
Collector-emitter saturation voltage
VCE(sat) IC = 50mA , IB = 1mA
0.1
0.5
V
Base-emitter saturation voltage
VBE(sat) IC = 50mA , IB = 1mA
0.8
1.1
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
V
60
V
Marking
Marking
GY
www.kexin.com.cn
1