Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3689 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 0.4 3 Small Cob (Cob=1.5pF typ). 1 Low collector-to-emitter saturation voltage (VCE(sat) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.5V). 0.55 High DC current gain (hFE=800 to 3200). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 100 mA Collector current (pulse) Icp 200 mA Collector dissipation PC 200 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE =5V , IC = 10mA Gain bandwidth product Output capacitance Testconditons Min 800 Typ 1500 3200 fT VCE = 10V , IC = 10mA 200 MHz Cob VCB = 10V , f = 1.0MHz 1.5 pF Collector-emitter saturation voltage VCE(sat) IC = 50mA , IB = 1mA 0.1 0.5 V Base-emitter saturation voltage VBE(sat) IC = 50mA , IB = 1mA 0.8 1.1 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V 60 V Marking Marking GY www.kexin.com.cn 1