Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating Unit VCBO 30 V Emitter-base voltage VEBO 4 V Collector-emitter voltage VCEO 25 V ICM 1.5 A Peak collector current Collector current IC 1 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=10ìA,IE=0 Min Typ Max Unit 30 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 4 V Collector-emitter breakdown voltage V(BR)CEO IC=100ìA,RBE= 25 V Collector cutoff current ICBO VCB=25V,IE=0 Emitter cutoff current IEBO VEB=2V,IC=0 DC current gain hFE VCE=1V,IC=500mA 55 Gain bandwidth product fT VCE=6V,IE=-10mA ìA 1 ìA 300 VCE(sat) IC=500mA,IB=25mA Collector-emitter saturation voltage 1 0.5 100 V MHz hFE Classification Marking WC WD WE hFE 55 110 90 180 150 300 www.kexin.com.cn 1