Transistors SMD Type Silicon PNP Epitaxia 2SA1948 Features High fT fT=200MHz typ, low Cob Cob=3.5pF typ Small package for mounting High voltage VCEO=120V High collector dissipation Pc=500mW Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 500 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V (BR) CBO IC = -10 ìA, IE = 0 -120 Collector-emitter breakdown voltage V (BR) CEO IC = -1 mA,RBE = -120 V Emitter-base breakdown voltage V (BR) EBO IE = -10 ìA, IC = 0 -5 V Collector cut-off current ICBO VCB = -100 V, IE = 0 Emitter cut-off current IEBO VEB = -4 V, IC = 0 DC current gain hFE VCE = -10 V, IC = -10 mA Collector-emitter saturation voltage VCE(sat) 150 -0.1 ìA -0.1 ìA 800 -0.17 -0.6 V fT VCE = -10 V, IE = 10 mA 200 MHz Cob VCB=-10V,IE=0,f=1MHz 3.5 pF Gain band width product Collector output capacitance IC = -50 mA, IB = -2.5 mA V hFE Classification Marking ACE ACF ACG Rank E F G hFE 150 300 250 500 400 800 www.kexin.com.cn 1