Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1252 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Wide ASO and high durability against breakdown. 1 0.55 High VEBO. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -15 V Collector current IC -150 mA Collector current (pulse) ICP -300 mA mW Collector dissipation PC 200 Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -40V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -10V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -6V , IC = -1mA fT VCE = -6V , IC = -1mA 100 MHz Cob VCB = -6V , f = 1MHz 3.5 pF Gain bandwidth product Output capacitance 90 VCE(sat) IC = -50mA , IB = -5mA Collector-emitter saturation voltage 560 -0.5 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V hFE Classification Marking hFE D4 90 180 D5 135 270 D6 200 400 D7 300 600 www.kexin.com.cn 1