KEXIN 2SC3545

Transistors
IC
SMD Type
NPN Silicon Epitaxial Transistor
2SC3545
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Low Collector to Base Time Constant; CC rb’b = 4 ps TYP.
0.55
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Low Feedback Capacitance; Cre = 0.48 pF TYP.
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to Base Voltage
Parameter
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
125
Storage Temperature
Tstg
-65 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector Cutoff Current
ICBO
VCB = 12 V, IE = 0
DC Current Gain
hFE
VCE = 10 V, IC = 5.0 mA
Collector Saturation Voltage
Min
Typ
Max
Unit
0.1
ìA
50
100
250
VCE(sat) IC = 10 mA, IB = 1.0 mA
Gain Bandwidth Product
fT
Output Capacitance
Cob
Collector to Base Time Constant
VCE = 10 V, IE =-5.0 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
CC. rb’b VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz
0.5
1.3
2.0
V
MHz
0.48
1.0
pF
4
1.0
ps
hFE Classification
Marking
T42
T43
T44
Rank
M/P
L/Q
K/R
hFE
50 100
70 140
120 250
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