Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC3545 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Collector to Base Time Constant; CC rb’b = 4 ps TYP. 0.55 High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low Feedback Capacitance; Cre = 0.48 pF TYP. 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 50 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 125 Storage Temperature Tstg -65 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector Cutoff Current ICBO VCB = 12 V, IE = 0 DC Current Gain hFE VCE = 10 V, IC = 5.0 mA Collector Saturation Voltage Min Typ Max Unit 0.1 ìA 50 100 250 VCE(sat) IC = 10 mA, IB = 1.0 mA Gain Bandwidth Product fT Output Capacitance Cob Collector to Base Time Constant VCE = 10 V, IE =-5.0 mA VCB = 10 V, IE = 0, f = 1.0 MHz CC. rb’b VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz 0.5 1.3 2.0 V MHz 0.48 1.0 pF 4 1.0 ps hFE Classification Marking T42 T43 T44 Rank M/P L/Q K/R hFE 50 100 70 140 120 250 www.kexin.com.cn 1