Transistors SMD Type NPN Silicon Triple Diffused Transistor 2SC3588-Z +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High voltage VCEO=400V 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCES 400 V Emitter to base voltage VEBO 7 V Peak collector current *1 ICP 1 A Collector current IC 0.5 A PT 2 W Total power dissipation TC = 25 *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain * Testconditons Min Typ VCB=400V,IE=0 VEB=5.0V,IC=0 VCE=5V,IC=50mA 20 42 VCE=5V,IC=300mA 10 20 Max Unit 10 ìA 10 ìA 80 Collector Saturation Voltage * VCE(sat) IC=300mA,IB=60mA 0.2 0.5 V Base Saturation Voltage * VBE(sat) IC=300mA,IB=60mA 0.85 1.0 V Turn-on Time ton IC=0.3A,RL=500Ù,VCC=150V, 0.12 1.0 Storage Time tstg PW =50ìs,IB1=-IB2=0.06A 2.0 2.5 Duty Cycle 2% 0.35 1.0 Fall Time * Pulsed: PW tr ìs 350ìA,Duty Cycle 2% hFE Classification Marking M L K hFE 20 to 40 30 to 60 40 to 80 www.kexin.com.cn 1