KEXIN 2SC3588-Z

Transistors
SMD Type
NPN Silicon Triple Diffused Transistor
2SC3588-Z
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High voltage VCEO=400V
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCES
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current *1
ICP
1
A
Collector current
IC
0.5
A
PT
2
W
Total power dissipation
TC = 25 *2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain *
Testconditons
Min
Typ
VCB=400V,IE=0
VEB=5.0V,IC=0
VCE=5V,IC=50mA
20
42
VCE=5V,IC=300mA
10
20
Max
Unit
10
ìA
10
ìA
80
Collector Saturation Voltage *
VCE(sat)
IC=300mA,IB=60mA
0.2
0.5
V
Base Saturation Voltage *
VBE(sat)
IC=300mA,IB=60mA
0.85
1.0
V
Turn-on Time
ton
IC=0.3A,RL=500Ù,VCC=150V,
0.12
1.0
Storage Time
tstg
PW =50ìs,IB1=-IB2=0.06A
2.0
2.5
Duty Cycle 2%
0.35
1.0
Fall Time
* Pulsed: PW
tr
ìs
350ìA,Duty Cycle 2%
hFE Classification
Marking
M
L
K
hFE
20 to 40
30 to 60
40 to 80
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