KEXIN 2SB1628

Transistors
SMD Type
PNP Silicon Epitaxial Transistor
2SB1628
Features
High current capacitance.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to Base Voltage
Parameter
VCBO
-20
V
Collector to Emitter Voltage
VCEO
-16
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC(DC)
-3
A
Ic(Pulse)
-5
A
Collector Current (pulse) *
IB(DC)
-0.2
A
Base Current (pulse) *
Base Current (DC)
IB(Pulse)
-0.4
A
Total Power Dissipation
PT
2
W
Junction Temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW
10 ms, Duty Cycle
50%
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1
Transistors
SMD Type
2SB1628
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector Cut-off Current
ICBO
VCBO = -20 V, IE = 0
-100
nA
Emitter Cut-off Current
IEBO
VEBO = -6.0 V, IC = 0
-100
nA
hFE1
VCE = -2.0 V, IC = -0.5 A
hFE2
VCE = -2.0 V, IC = -3.0 A
70
VBE
VCE = -2.0 V, IC = -0.05 A
-600
DC Current Gain *
Base to Emitter Voltage *
140
280
560
-660
-700
mV
-240
-350
mV
Collector Saturation Voltage *
VCE(sat)1 IC = -2.0 A, IB = -0.1 A
Collector Saturation Voltage *
VCE(sat)2 IC = -3.0 A, IB = -0.15 A
-350
-550
mV
Base Saturation Voltage *
VBE(sat) IC = -2.0 A, IB = -0.1 A
-0.95
-1.2
V
Gain Bandwidth Product
fT
Output Capacitance
Cob
Turn-on Time
ton
Storage Time
tstg
Fall Time
* Pulsed: PW
tf
350 ìs, Duty Cycle
2%.
hFE Classification
2
Testconditons
Marking
ZX
ZY
ZZ
hFE
140 280
200 400
280 560
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VCE = –3.0 V, IE = 0.5 A
VCB = –10 V, IE = 0, f = 1 MHz
IC = -1.0 A, VCC = -10 V,
RL = 5.0 ? , IB1 = -IB2 = -0.1 A,
320
MHz
45
pF
70
ns
110
ns
40
ns