Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (Pulse)* ICP 2 A Total power dissipation PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 45V, IE=0 Emitter cutoff current IEBO VEB = 4V, IC=0 DC current gain * hFE VCE = 10V , IC = 50mA Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA Gain bandwidth product fT Output capacitance Cob Turn-on time ton Storage time tstg Turn-off time toff *. PW VCE = 10V , IE = -100mA VCB = 10V , IE = 0, f = 1.0MHz IC = 500mA , IB1 = IB2 = 50mA Min Typ 60 300 Max Unit 0.5 nA 0.5 nA 200 0.17 0.4 0.9 1.2 380 V V MHz 6.7 10 pF 20 40 ns 55 80 ns 72 100 ns 350ìs,duty cycle 2% hFE Classification Marking OL OK hFE 60 120 100 200 www.kexin.com.cn 1